1 C3D10065I rev. e, 01-2018 C3D10065Isilicon carbide schottky diode z -rec ? rectifier features ? 650-volt schottky rectiier ? ceramic package provides 2.5kv isolation ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeficient on v f beneits ? electrically isolated package ? essentially no switching losses ? higher eficiency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? hvac ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-220 isolated v rrm = 650 v i f ( t c =125?c) = 10 a q c = 24 nc pin 1pin 2 case part number package marking C3D10065I isolated to-220-2 C3D10065I maximum ratings (t c = 25?c unless otherwise speciied) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc blocking voltage 650 v i f continuous forward current 1910 9 a t c =25?c t c =125?c t c =135?c fig. 3 i frm repetitive peak forward surge current 39 26.5 a t c =25?c, t p =10 ms, half sine pulse t c -110?c, t p =10 ms, half sine pulse i fsm non-repetitive peak forward surge current 9070 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse fig. 8 i f,max non-repetitive peak forward surge current 860680 a t c =25?c, t p =10 ms, pulse t c =110?c, t p =10 ms, pulse fig. 8 p tot power dissipation 6026 w t c =25?c t c =110?c fig. 4 dv/dt diode dv/dt ruggedness 200 v/ns v r =0-650v i 2 dt i 2 t value 40.524.5 a 2 s t c =25?c, t p =10 ms t c =110?c, t p =10 ms t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw6-32 screw downloaded from: http:///
2 C3D10065I rev. e, 01-2018 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.52.0 1.82.4 v i f = 10 a t j =25c i f = 10 a t j =175c fig. 1 i r reverse current 1224 60 220 a v r = 650 v t j =25c v r = 650 v t j =175c fig. 2 q c total capacitive charge 24 nc v r = 400 v, i f = 10 a d i /d t = 500 a/ s t j = 25c fig. 5 c total capacitance 460.5 4440 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 3.6 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from junction to case 2.5 c/w fig. 9 typical performance 40 50 60 70 80 90 100 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c t = 25 c 0 10 20 30 0 100 200 300 400 500 600 700 800 900 1000 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c figure 1. forward characteristics figure 2. reverse characteristics 10 15 20 25 30 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 5 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) downloaded from: http:///
3 C3D10065I rev. e, 01-2018 30 40 50 60 70 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 10 20 25 50 75 100 125 150 175 figure 3. current derating figure 4. power derating 30 40 50 60 70 0 10 20 25 50 75 100 125 150 175 figure 5. total capacitance charge vs. reverse voltage figure 6. capacitance vs. reverse v oltage typical performance 15 20 25 30 35 40 capacitive charge, q c (nc) conditions: t j = 25 c 0 5 10 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 200 250 300 350 400 450 500 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 100 150 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) downloaded from: http:///
4 C3D10065I rev. e, 01-2018 typical performance 4 5 6 7 8 9 10 capacitance stored energy, e c ( ? j) 0 1 2 3 0 100 200 300 400 500 600 700 capacitance stored energy, e reverse voltage, v r (v) figure 7. capacitance stored energy v r (v) e c ( m j) figure 9. transient thermal impedance 100e-3 1 0.5 0.3 0.1 0.050.02 0.01 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 thermal resistance (?c/w) t (sec) 10 100 1,000 10e-6 100e-6 1e-3 10e-3 i fsm (a) time, t p (s) t j = 25 c t j = 110 c figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) downloaded from: http:///
5 C3D10065I rev. e, 01-2018 note: recommended soldering proiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering package dimensions package to-220-2 part number package marking C3D10065I isolated to-220-2 C3D10065I to-220-2 recommended solder pad layout downloaded from: http:///
6 6 C3D10065I rev. e, 01-2018 copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfspeed representative or from the product ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi- cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac deibrillators or similar emergency medical equipment, aircraft navigation or communication o r control systems, or air trafic control systems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links diode model v t r t note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t + if * r t v t = 0.94 + (t j * -1.3*10 -3 ) r t = 0.044 + (t j * 4.4*10 -4 ) downloaded from: http:///
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